是否Rohs认证: | 符合 | 生命周期: | End Of Life |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.73 | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 600 V | 最大降落时间(tf): | 170 ns |
门极-发射极最大电压: | 25 V | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 140 W |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT50J341 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1S, TO-3P(N), 3 PIN, Insulate |
![]() |
GT50J341,Q | TOSHIBA |
获取价格 |
Insulated Gate Bipolar Transistor |
![]() |
GT50J342 | TOSHIBA |
获取价格 |
EOL announced |
![]() |
GT50JR21 | TOSHIBA |
获取价格 |
600 V/50 A IGBT, Built-in Diodes, TO-3P(N) |
![]() |
GT50JR22 | TOSHIBA |
获取价格 |
600 V/50 A IGBT, Built-in Diodes, TO-3P(N) |
![]() |
GT50MR21 | TOSHIBA |
获取价格 |
Discrete IGBTs Silicon N-Channel IGBT |
![]() |
GT50N321 | TOSHIBA |
获取价格 |
Bipolar Small-Signal Transistors |
![]() |
GT50N322A | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 1000 V, N-CHANNEL IGBT, LEAD FREE, 2-16C1C, 3 PIN, Insulated Gate BIP Tra |
![]() |
GT50N324 | TOSHIBA |
获取价格 |
Bipolar Small-Signal Transistors |
![]() |
GT50NR21 | TOSHIBA |
获取价格 |
1050 V/50 A IGBT, Built-in Diodes, TO-3P(N) |
![]() |