Datasheet > GT50J121_06

GT50J121_06

更新时间： 2024-11-18 03:40:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关双极性晶体管
页数	文件大小	规格书
6页	191K
描述
Silicon N Channel IGBT High Power Switching Applications

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中文翻译

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GT50J121_06 数据手册

GT50J121

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT50J121

High Power Switching Applications

Unit: mm

Fast Switching Applications

•

Fourth-generation IGBT

Enhancement mode type

Fast switching (FS): Operating frequency up to 50 kHz (reference)

• High speed: t = 0.05 μs (typ.)

• Low switching loss: E = 1.30 mJ (typ.)

: E = 1.34 mJ (typ.)

off

•

Low saturation Voltage: V

= 2.0 V (typ.)

CE (sat)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

600

±20

CES

GES

JEDEC

―

Collector current

1 ms

100

JEITA

Collector power dissipation

(Tc = 25°C)

240

TOSHIBA

Weight: 9.75 g

2-21F2C

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Thermal resistance

Symbol

Max

Unit

0.521

°C/W

th (j-c)

Marking

Part No. (or abbreviation code)

Lot No.

TOSHIBA

GT50J121

JAPAN

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-11-01

12 3 4 5 6

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