Datasheet > GT50J322_06

GT50J322_06

更新时间： 2024-09-23 03:40:03

品牌	Logo	应用领域
东芝 - TOSHIBA		双极性晶体管
页数	文件大小	规格书
6页	615K
描述
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT

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中文翻译

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数据手册

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GT50J322_06 数据手册

GT50J322

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT50J322

FOURTH GENERATION IGBT

Unit: mm

CURRENT RESONANCE INVERTER SWITCHING

APPLICATIONS

z FRD included between emitter and collector

z Enhancement mode type

z High speed

: t = 0.25μs (Typ.) (I = 50A)

z Low saturation voltage

: V = 2.1V (Typ.) (I = 50A)

CE (sat) C

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector−Emitter Voltage

Gate−Emitter Voltage

600

±20

CES

GES

Collector Current

1ms

100

JEDEC

JEITA

⎯

Emitter-Collector Foward

Current

1ms

Collector Power Dissipation

(Tc = 25°C)

130

TOSHIBA

2-21F2C

Weight: 9.75 g (typ.)

Junction Temperature

150

°C

Storage Temperature Range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

EQUIVALENT CIRCUIT

MARKING

Part No. (or abbreviation code)

Lot No.

TOSHIBA

GT50J322

JAPAN

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-11-01

12 3 4 5 6

中文翻译

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