5秒后页面跳转
GT50J325_06 PDF预览

GT50J325_06

更新时间: 2024-11-01 03:40:03
品牌 Logo 应用领域
东芝 - TOSHIBA 开关双极性晶体管
页数 文件大小 规格书
7页 199K
描述
Silicon N Channel IGBT High Power Switching Applications

GT50J325_06 数据手册

 浏览型号GT50J325_06的Datasheet PDF文件第2页浏览型号GT50J325_06的Datasheet PDF文件第3页浏览型号GT50J325_06的Datasheet PDF文件第4页浏览型号GT50J325_06的Datasheet PDF文件第5页浏览型号GT50J325_06的Datasheet PDF文件第6页浏览型号GT50J325_06的Datasheet PDF文件第7页 
GT50J325  
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT  
GT50J325  
High Power Switching Applications  
Unit: mm  
Fast Switching Applications  
Fourth generation IGBT  
Enhancement mode type  
Fast switching (FS): Operating frequency up to 50 kHz (reference)  
High speed: t = 0.05 μs (typ.)  
f
Low switching loss: E = 1.30 mJ (typ.)  
on  
: E = 1.34 mJ (typ.)  
off  
Low saturation Voltage: V  
= 2.0 V (typ.)  
CE (sat)  
FRD included between emitter and collector  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V
V
600  
±20  
50  
V
V
CES  
GES  
DC  
I
C
Collector current  
A
JEDEC  
1 ms  
DC  
I
100  
50  
CP  
I
F
Emitter-collector forward  
current  
JEITA  
A
1 ms  
I
100  
FM  
TOSHIBA  
Weight: 9.75 g  
2-21F2C  
Collector power dissipation  
(Tc = 25°C)  
P
240  
W
C
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance (IGBT)  
Thermal resistance (diode)  
R
R
0.521  
2.30  
°C/W  
°C/W  
th (j-c)  
th (j-c)  
Equivalent Circuit  
Marking  
Part No. (or abbreviation code)  
Lot No.  
Collector  
TOSHIBA  
GT50J325  
Gate  
JAPAN  
A line indicates  
Emitter  
lead (Pb)-free package or  
lead (Pb)-free finish.  
1
2006-11-01  

与GT50J325_06相关器件

型号 品牌 获取价格 描述 数据表
GT50J327 TOSHIBA

获取价格

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverte
GT50J328 TOSHIBA

获取价格

Current Resonance Inverter Switching Application Fourth Generation IGBT
GT50J341 TOSHIBA

获取价格

TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1S, TO-3P(N), 3 PIN, Insulate
GT50J341,Q TOSHIBA

获取价格

Insulated Gate Bipolar Transistor
GT50J342 TOSHIBA

获取价格

EOL announced
GT50JR21 TOSHIBA

获取价格

600 V/50 A IGBT, Built-in Diodes, TO-3P(N)
GT50JR22 TOSHIBA

获取价格

600 V/50 A IGBT, Built-in Diodes, TO-3P(N)
GT50MR21 TOSHIBA

获取价格

Discrete IGBTs Silicon N-Channel IGBT
GT50N321 TOSHIBA

获取价格

Bipolar Small-Signal Transistors
GT50N322A TOSHIBA

获取价格

TRANSISTOR 50 A, 1000 V, N-CHANNEL IGBT, LEAD FREE, 2-16C1C, 3 PIN, Insulated Gate BIP Tra