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FDS8926A PDF预览

FDS8926A

更新时间: 2024-09-15 22:40:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 202K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

FDS8926A 数据手册

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February 1998  
FDS8926A  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
SO-8 N-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high  
cell density, DMOS technology. This very high density  
process is especially tailored to provide superior switching  
performance and minimize on-state resistance. These devices  
are particularly suited for low voltage applications such as disk  
drive motor control, battery powered circuits where fast  
switching, low in-line power loss, and resistance to transients  
are needed.  
5.5 A, 30 V. RDS(ON) = 0.030 W @ VGS = 4.5 V  
RDS(ON) = 0.038 W @ VGS = 2.5 V.  
High density cell design for extremely low RDS(ON)  
.
Combines low gate threshold (fully enhanced at 2.5V) with  
high breakdown voltage of 30 V.  
High power and current handling capability in a widely  
used surface mount package.  
Dual MOSFET in surface mount package.  
SuperSOTTM-6  
SuperSOTTM-8  
SOIC-16  
SOT-23  
SO-8  
SOT-223  
D2  
5
6
7
8
4
D2  
D1  
D1  
3
2
G2  
S2  
G1  
1
pin 1  
SO-8  
S1  
Absolute Maximum Ratings TA = 25oC unless other wise noted  
Symbol Parameter  
FDS8926A  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
30  
V
Gate-Source Voltage  
±8  
V
A
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
(Note 1a)  
5.5  
20  
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
1.6  
W
PD  
(Note 1b)  
(Note 1c)  
1
0.9  
TJ,TSTG  
Operating and Storage Temperature Range  
-55 to 150  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient (Note 1a)  
Thermal Resistance, Junction-to-Case  
78  
40  
°C/W  
°C/W  
RqJA  
RqJC  
(Note 1)  
FDS8926A Rev.B  
© 1998 Fairchild Semiconductor Corporation  

FDS8926A 替代型号

型号 品牌 替代类型 描述 数据表
NDS9925A FAIRCHILD

类似代替

Dual N-Channel Enhancement Mode Field Effect Transistor
IRF7311PBF INFINEON

功能相似

HEXFET㈢Power MOSFET
IRF7301 INFINEON

功能相似

Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)

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