Datasheet > FDS4672A_07

FDS4672A_07

更新时间： 2024-09-28 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	201K
描述
40V N-Channel PowerTrench㈢ MOSFET

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FDS4672A_07 数据手册

February 2007

FDS4672A

40V N-Channel PowerTrench^®MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

• 11 A, 40 V.

R_DS(ON)= 13 mΩ @ V_GS= 4.5 V

• High performance trench technology for extremely

low R_DS(ON)

• Low gate charge (35 nC typical)

• High power and current handling capability

• RoHS Compliant

Applications

• DC/DC converter

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

±12

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

Single Pulse Avalanche Energy

Power Dissipation for Single Operation

(Note 3)

(Note 1a)

(Note 1b)

(Note 1c)

181

E_AS

P_D

2.5

1.4

1.2

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS4672A

13’’

12mm

2500 units

FDS4672A Rev C1 (W)

12 3 4 5 6

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