生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.37 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 11 A |
最大漏源导通电阻: | 0.013 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS4672AF011 | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 11A I(D), 40V, 1-Element, N-Channel, Silicon, Metal- |
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FDS4672A-F095 | FAIRCHILD |
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Transistor |
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FDS4672AL86Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 11A I(D), 40V, 1-Element, N-Channel, Silicon, Metal- |
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FDS4675 | FAIRCHILD |
获取价格 |
40V P-Channel PowerTrench MOSFET |
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FDS4675 | ONSEMI |
获取价格 |
P 沟道,PowerTrench® MOSFET,40V,-11A,13mΩ |
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FDS4675_10 | FAIRCHILD |
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40V P-Channel Power TrenchMOSFET |
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FDS4675_F085 | FAIRCHILD |
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Small Signal Field-Effect Transistor, 11A I(D), 40V, 1-Element, P-Channel, Silicon, Metal- |
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FDS4675_NL | FAIRCHILD |
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Power Field-Effect Transistor, 11A I(D), 40V, 0.013ohm, 1-Element, P-Channel, Silicon, Met |
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FDS4675D84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 40V, 0.013ohm, 1-Element, P-Channel, Silicon, Met |
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FDS4675-F085 | ONSEMI |
获取价格 |
P 沟道 PowerTrench® MOSFET -40V,-11A,13mΩ |
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