是否无铅: | 不含铅 | 生命周期: | Not Recommended |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
风险等级: | 6.92 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 11 A |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.013 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e4 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 2.4 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS4675L86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 40V, 0.013ohm, 1-Element, P-Channel, Silicon, Met | |
FDS4675L99Z | FAIRCHILD |
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Power Field-Effect Transistor, 11A I(D), 40V, 0.013ohm, 1-Element, P-Channel, Silicon, Met | |
FDS4675S62Z | FAIRCHILD |
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Power Field-Effect Transistor, 11A I(D), 40V, 0.013ohm, 1-Element, P-Channel, Silicon, Met | |
FDS4685 | ONSEMI |
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40V,P 沟道,PowerTrench® MOSFET,-8.2A,27mΩ | |
FDS4685 | FAIRCHILD |
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40V P-Channel PowerTrench MOSFET | |
FDS4685-NF074 | FAIRCHILD |
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Transistor | |
FDS4685-NF074 | ONSEMI |
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40V,P 沟道,PowerTrench® MOSFET,-8.2A,27mΩ | |
FDS4770 | FAIRCHILD |
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40V N-Channel PowerTrench MOSFET | |
FDS4770_04 | FAIRCHILD |
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40V N-Channel PowerTrench?MOSFET | |
FDS4770_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 13.2A I(D), 40V, 1-Element, N-Channel, Silicon, Meta |