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FDS4675

更新时间: 2024-09-27 22:40:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲光电二极管
页数 文件大小 规格书
5页 75K
描述
40V P-Channel PowerTrench MOSFET

FDS4675 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.31
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):11 A最大漏极电流 (ID):11 A
最大漏源导通电阻:0.013 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.4 W最大脉冲漏极电流 (IDM):50 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS4675 数据手册

 浏览型号FDS4675的Datasheet PDF文件第2页浏览型号FDS4675的Datasheet PDF文件第3页浏览型号FDS4675的Datasheet PDF文件第4页浏览型号FDS4675的Datasheet PDF文件第5页 
February 2001  
FDS4675  
40V P-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This P-Channel MOSFET is a rugged gate version of  
Fairchild Semiconductor’s advanced PowerTrench  
process. It has been optimized for power management  
applications requiring a wide range of gave drive  
voltage ratings (4.5V – 20V).  
· –11 A, –40 V  
RDS(ON) = 0.013 W @ VGS = –10 V  
RDS(ON) = 0.017 W @ VGS = –4.5 V  
· Fast switching speed  
· High performance trench technology for extremely  
Applications  
low RDS(ON)  
· Power management  
· Load switch  
· High power and current handling capability  
· Battery protection  
D
5
6
7
8
4
3
2
1
D
D
D
SO-8  
G
S
S
S
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
40  
Units  
V
V
A
VGSS  
ID  
Gate-Source Voltage  
±20  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
11  
50  
2.4 (steady state)  
1.4  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
W
1.2  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1c)  
(Note 1)  
62.5 (steady state), 50 (10 sec)  
RqJA  
RqJA  
RqJC  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
125  
25  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS4675  
FDS4675  
13’’  
12mm  
2500 units  
Ó2001 Fairchild Semiconductor Corporation  
FDS4675 Rev C(W)  

FDS4675 替代型号

型号 品牌 替代类型 描述 数据表
FDS4675_F085 FAIRCHILD

类似代替

Small Signal Field-Effect Transistor, 11A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-
FDS4675_NL FAIRCHILD

功能相似

Power Field-Effect Transistor, 11A I(D), 40V, 0.013ohm, 1-Element, P-Channel, Silicon, Met
AO4485 AOS

功能相似

P-Channel Enhancement Mode Field Effect Transistor

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