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FDMS8460 PDF预览

FDMS8460

更新时间: 2024-09-25 03:36:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
7页 327K
描述
N-Channel Power Trench㈢ MOSFET 40V, 49A, 2.2mヘ

FDMS8460 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:QFN
包装说明:ROHS COMPLIANT, POWER 56, 8 PIN针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.89
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:1182050Samacsys Pin Count:8
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:PQFN8 5X6, 1.27P CASE 483AE ISSUE A FFWSamacsys Released Date:2019-05-10 08:08:46
Is Samacsys:N雪崩能效等级(Eas):864 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):49 A最大漏极电流 (ID):25 A
最大漏源导通电阻:0.0022 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-N5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):104 W最大脉冲漏极电流 (IDM):160 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMS8460 数据手册

 浏览型号FDMS8460的Datasheet PDF文件第2页浏览型号FDMS8460的Datasheet PDF文件第3页浏览型号FDMS8460的Datasheet PDF文件第4页浏览型号FDMS8460的Datasheet PDF文件第5页浏览型号FDMS8460的Datasheet PDF文件第6页浏览型号FDMS8460的Datasheet PDF文件第7页 
January 2008  
FDMS8460  
tm  
N-Channel Power Trench® MOSFET  
40V, 49A, 2.2mΩ  
Features  
General Description  
„ Max rDS(on) = 2.2mat VGS = 10V, ID = 25A  
„ Max rDS(on) = 3.0mat VGS = 4.5V, ID = 21.7A  
„ Advanced Package and Silicon combination for low rDS(on)  
„ MSL1 robust package design  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor‘s advanced Power Trench® process thant has  
been especially tailored to minimize the on-state resistance and  
yet maintain superior switching performance.  
Application  
„ 100% UIL tested  
„ DC - DC Conversion  
„ RoHS Compliant  
Top  
Bottom  
Pin 1  
S
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
S
S
G
D
D
D
D
Power 56  
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
40  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±20  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25°C  
C = 25°C  
49  
T
167  
ID  
A
TA = 25°C  
(Note 1a)  
(Note 3)  
25  
-Pulsed  
160  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
864  
mJ  
W
TC = 25°C  
TA = 25°C  
104  
PD  
Power Dissipation  
(Note 1a)  
2.5  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
1.2  
50  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13’’  
Tape Width  
12 mm  
Quantity  
FDMS8460  
FDMS8460  
Power 56  
3000 units  
1
©2008 Fairchild Semiconductor Corporation  
FDMS8460 Rev.C  
www.fairchildsemi.com  

FDMS8460 替代型号

型号 品牌 替代类型 描述 数据表
IRFH5004TRPBF INFINEON

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