Datasheet > FDMS86101_12

FDMS86101_12

更新时间： 2024-11-13 12:51:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	294K
描述
N-Channel PowerTrenchÂ® MOSFET 100 V, 60 A, 8 mÎ©

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FDMS86101_12 数据手册

October 2012

FDMS86101

N-Channel PowerTrench^®MOSFET

100 V, 60 A, 8 mΩ

Features

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench^®process thant has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Max r_DS(on)= 8 mΩ at V_GS= 10 V, I_D= 13 A

Max r_DS(on)= 13.5 mΩ at V_GS= 6 V, I_D= 9.5 A

Advanced Package and Silicon combination for low r_DS(on)

and high efficiency

MSL1 robust package design

100% UIL tested

Application

DC-DC Conversion

100% Rg tested

RoHS Compliant

Top

Bottom

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Continuous

±20

T_C= 25 °C

T_A= 25 °C

I_D

(Note 1a)

(Note 3)

(Note 1a)

12.4

-Pulsed

200

E_AS

Single Pulse Avalanche Energy

Power Dissipation

173

T_C= 25 °C

T_A= 25 °C

104

P_D

Power Dissipation

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.2

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12 mm

Quantity

3000 units

FDMS86101

Power 56

13 ’’

FDMS86101 Rev.C8

www.fairchildsemi.com

12 3 4 5 6 7

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