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FDMS8558SDC PDF预览

FDMS8558SDC

更新时间： 2024-09-26 11:13:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
11页 510K
描述
25V N沟道PowerTrench® SyncFET™

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中文翻译

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FDMS8558SDC 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：QFN-8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95Factory Lead Time：1 week
风险等级：5.64Is Samacsys：N
雪崩能效等级（Eas）：145 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：25 V
最大漏极电流 (Abs) (ID)：90 A最大漏极电流 (ID)：90 A
最大漏源导通电阻：0.0015 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：MO-240AAJESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：89 W最大脉冲漏极电流 (IDM)：140 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDMS8558SDC 数据手册

 浏览型号FDMS8558SDC的Datasheet PDF文件第2页浏览型号FDMS8558SDC的Datasheet PDF文件第3页浏览型号FDMS8558SDC的Datasheet PDF文件第4页浏览型号FDMS8558SDC的Datasheet PDF文件第5页浏览型号FDMS8558SDC的Datasheet PDF文件第6页浏览型号FDMS8558SDC的Datasheet PDF文件第7页 
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与FDMS8558SDC相关器件

型号 品牌 获取价格 描述 数据表
FDMS8560S FAIRCHILD

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 		N-Channel PowerTrench® SyncFETTM 25 V, 70 A,
FDMS8560S ONSEMI

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 		N 沟道，PowerTrench® SyncFET™，25V，70A，1.8mΩ
FDMS8570S FAIRCHILD

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 		N-Channel PowerTrench® SyncFETTM 25 V, 60 A,
FDMS8570S ONSEMI

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 		25V N沟道PowerTrench® SyncFET™
FDMS8570SDC FAIRCHILD

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 		DUAL COOL™ PACKAGE POWERTRENCH® MOSFETs
FDMS8570SDC ONSEMI

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 		25V N沟道PowerTrench® SyncFET™
FDMS86101 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100 V, 49 A, 8
FDMS86101 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，100V，60A，8mΩ
FDMS86101_12 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100 V, 60 A, 8
FDMS86101A FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100 V, 60 A, 8

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