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FDMS86102LZ PDF预览

FDMS86102LZ

更新时间： 2024-11-14 11:14:39
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 443K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，22A，25mΩ

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中文翻译

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FDMS86102LZ 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：26 weeks风险等级：0.94
Is Samacsys：N其他特性：LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：84 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：22 A最大漏极电流 (ID)：7 A
最大漏源导通电阻：0.025 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：MO-240AAJESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：69 W
最大脉冲漏极电流 (IDM)：40 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDMS86102LZ 数据手册

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中文翻译

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与FDMS86102LZ相关器件

型号 品牌 获取价格 描述 数据表
FDMS86103L FAIRCHILD

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 		Power Field-Effect Transistor, 12A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Me
FDMS86103L ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，81A，8mΩ
FDMS86104 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100 V, 16 A, 2
FDMS86104 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，16A，24mΩ
FDMS86105 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，26A，34mΩ
FDMS86105 FAIRCHILD

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 		N-Channel PowerTrench MOSFET 100V, 26A, 34milliohm
FDMS86150 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100 V, 60 A, 4
FDMS86150 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，80A，4.85m
FDMS86150A ONSEMI

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 		N-Channel Shielded Gate PowerTrench® MOSFET 1
FDMS86150ET100 ONSEMI

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 		N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，128A，4.85m

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