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FDMS86150ET100 PDF预览

FDMS86150ET100

更新时间： 2024-09-26 11:15:59
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 360K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，128A，4.85mΩ

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中文翻译

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FDMS86150ET100 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-N5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：26 weeks风险等级：2.1
雪崩能效等级（Eas）：726 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：128 A最大漏极电流 (ID)：128 A
最大漏源导通电阻：0.00485 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：50 pFJEDEC-95代码：MO-240AA
JESD-30 代码：R-PDSO-N5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：187 W
最大脉冲漏极电流 (IDM)：617 A表面贴装：YES
端子面层：Tin (Sn)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：57 ns最大开启时间（吨）：50 ns
Base Number Matches：1

FDMS86150ET100 数据手册

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与FDMS86150ET100相关器件

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 		Power Field-Effect Transistor, 14A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Me
FDMS86152 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，100V，45A，6mΩ
FDMS86163P ONSEMI

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 		P 沟道，PowerTrench® MOSFET，-100V，-50A，22mΩ
FDMS86180 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，151A，3.2m
FDMS86181 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，124A，4.2m
FDMS86181E ONSEMI

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 		N-Channel Shielded Gate PowerTrench® MOSFET 1
FDMS86182 ONSEMI

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 		N 沟道屏蔽门极 PowerTrench® MOSFET 100V，78A，7.2mΩ
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 		N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，51 A，12.8
FDMS86200 FAIRCHILD

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 		N-Channel Power Trench® MOSFET 150 V, 49 A,
FDMS86200 ONSEMI

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 		N 沟道，Power Trench® MOSFET，150V，35A，18mΩ

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