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FDMS86104 PDF预览

FDMS86104

更新时间： 2024-11-14 11:11:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 404K
描述
N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，16A，24mΩ

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中文翻译

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FDMS86104 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.96雪崩能效等级（Eas）：96 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：16 A
最大漏极电流 (ID)：7 A最大漏源导通电阻：0.024 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MO-240AA
JESD-30 代码：R-PDSO-F5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：73 W最大脉冲漏极电流 (IDM)：30 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDMS86104 数据手册

 浏览型号FDMS86104的Datasheet PDF文件第2页浏览型号FDMS86104的Datasheet PDF文件第3页浏览型号FDMS86104的Datasheet PDF文件第4页浏览型号FDMS86104的Datasheet PDF文件第5页浏览型号FDMS86104的Datasheet PDF文件第6页浏览型号FDMS86104的Datasheet PDF文件第7页 
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中文翻译

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与FDMS86104相关器件

型号 品牌 获取价格 描述 数据表
FDMS86105 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，26A，34mΩ
FDMS86105 FAIRCHILD

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 		N-Channel PowerTrench MOSFET 100V, 26A, 34milliohm
FDMS86150 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100 V, 60 A, 4
FDMS86150 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，80A，4.85m
FDMS86150A ONSEMI

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 		N-Channel Shielded Gate PowerTrench® MOSFET 1
FDMS86150ET100 ONSEMI

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 		N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，128A，4.85m
FDMS86152 FAIRCHILD

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 		Power Field-Effect Transistor, 14A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Me
FDMS86152 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，100V，45A，6mΩ
FDMS86163P ONSEMI

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 		P 沟道，PowerTrench® MOSFET，-100V，-50A，22mΩ
FDMS86180 ONSEMI

获取价格

 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，151A，3.2m

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