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FDMS8570SDC PDF预览

FDMS8570SDC

更新时间： 2024-11-14 11:15:27
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
11页 512K
描述
25V N沟道PowerTrench® SyncFET™

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中文翻译

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FDMS8570SDC 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：SMALL OUTLINE, R-PDSO-F5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：5.67
雪崩能效等级（Eas）：45 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：25 V
最大漏极电流 (Abs) (ID)：60 A最大漏极电流 (ID)：28 A
最大漏源导通电阻：0.0028 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：MO-240AAJESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：59 W
最大脉冲漏极电流 (IDM)：100 A子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDMS8570SDC 数据手册

 浏览型号FDMS8570SDC的Datasheet PDF文件第2页浏览型号FDMS8570SDC的Datasheet PDF文件第3页浏览型号FDMS8570SDC的Datasheet PDF文件第4页浏览型号FDMS8570SDC的Datasheet PDF文件第5页浏览型号FDMS8570SDC的Datasheet PDF文件第6页浏览型号FDMS8570SDC的Datasheet PDF文件第7页 
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与FDMS8570SDC相关器件

型号 品牌 获取价格 描述 数据表
FDMS86101 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100 V, 49 A, 8
FDMS86101 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，100V，60A，8mΩ
FDMS86101_12 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100 V, 60 A, 8
FDMS86101A FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100 V, 60 A, 8
FDMS86101A ONSEMI

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 		N 沟道 PowerTrench® MOSFET 100V，60A，8mΩ
FDMS86101DC FAIRCHILD

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 		DUAL COOL™ PACKAGE POWERTRENCH® MOSFETs
FDMS86101DC ONSEMI

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 		N 沟道，双 CoolTM 56 PowerTrench® MOSFET，100V，60A
FDMS86102LZ FAIRCHILD

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 		N-Channel Power Trench® MOSFET 100 V, 22 A,
FDMS86102LZ ONSEMI

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 		N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，22A，25mΩ
FDMS86103L FAIRCHILD

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 		Power Field-Effect Transistor, 12A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Me

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