FDMS86101A

更新时间： 2024-09-25 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	310K
描述
N-Channel PowerTrenchÂ® MOSFET 100 V, 60 A, 8 mÎ©

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

FDMS86101A 数据手册

April 2012

FDMS86101A

N-Channel PowerTrench^®MOSFET

100 V, 60 A, 8 mΩ

Features

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench^®process thant has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Max r_DS(on)= 8 mΩ at V_GS= 10 V, I_D= 13 A

Max r_DS(on)= 13.5 mΩ at V_GS= 6 V, I_D= 9.5 A

Advanced Package and Silicon combination for low r_DS(on)

and high efficiency

MSL1 robust package design

100% UIL tested

Application

DC-DC Conversion

100% Rg tested

RoHS Compliant

Bottom

Top

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

-Pulsed

180

E_AS

Single Pulse Avalanche Energy

Power Dissipation

486

T_C= 25 °C

T_A= 25 °C

104

P_D

Power Dissipation

(Note 1a)

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.2

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMS86101A

Power 56

3000 units

FDMS86101A Rev.C

www.fairchildsemi.com

12 3 4 5 6 7

中文翻译

下载PDF

FDMS86101A 替代型号

型号	品牌	替代类型	描述	数据表
CSD19531Q5A	TI	功能相似	100V N-Channel NexFET Power MOSFETs
BSC082N10LSG	INFINEON	功能相似	OptiMOSâ¢2 Power-Transistor

与FDMS86101A相关器件

型号	品牌	获取价格	描述	数据表
FDMS86101DC	FAIRCHILD	获取价格	DUAL COOLâ¢ PACKAGE POWERTRENCHÂ® MOSFETs
FDMS86101DC	ONSEMI	获取价格	N 沟道，双 CoolTM 56 PowerTrench® MOSFET，100V，60A
FDMS86102LZ	FAIRCHILD	获取价格	N-Channel Power TrenchÂ® MOSFET 100 V, 22 A,
FDMS86102LZ	ONSEMI	获取价格	N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，22A，25mΩ
FDMS86103L	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Me
FDMS86103L	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，81A，8mΩ
FDMS86104	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 100 V, 16 A, 2
FDMS86104	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，16A，24mΩ
FDMS86105	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，26A，34mΩ
FDMS86105	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 100V, 26A, 34milliohm