FDMS8558S

更新时间： 2024-09-25 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	310K
描述
N-Channel PowerTrenchÂ® SyncFETTM

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中文翻译

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数据手册

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FDMS8558S 数据手册

April 2012

FDMS8558S

N-Channel PowerTrench^®SyncFET^TM

25 V, 90 A, 1.5 mΩ

Features

General Description

Max r_DS(on)= 1.5 mΩ at V_GS= 10 V, I_D= 33 A

Max r_DS(on)= 1.7 mΩ at V_GS= 4.5 V, I_D= 31 A

High performance technology for extremely low r_DS(on)

SyncFET^TMSchottky Body Diode

RoHS Compliant

This N-Channel SyncFET^TMis produced using Fairchild

Semiconductor’s

advanced

PowerTrench^®process.

Advancements in both silicon and package technologies have

been combined to offer the lowest r_DS(on)while maintaining

excellent switching performance by extremely low Junction-to-

Ambient thermal resistance. This device has the added benefit

of an efficient monolithic Schottky body diode.

Applications

Synchronous Rectifier for DC/DC Converters

Telecom Secondary Side Rectification

High End Server/Workstation Vcore Low Side

Bottom

Top

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous (Package limited)

-Continuous

T_C= 25 °C

T_A= 25 °C

I_D

(Note 1a)

(Note 3)

-Pulsed

140

E_AS

Single Pulse Avalanche Energy

Power Dissipation

145

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

T_C= 25 °C

T_A= 25 °C

1.6

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12 mm

Quantity

09OD

FDMS8558S

Power 56

3000 units

FDMS8558S Rev.D1

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

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