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FDS4070N7 PDF预览

FDS4070N7

更新时间: 2024-11-12 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 202K
描述
40V N-Channel PowerTrench MOSFET

FDS4070N7 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.32
雪崩能效等级(Eas):310 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):15.3 A最大漏极电流 (ID):15.3 A
最大漏源导通电阻:0.007 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3 W最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS4070N7 数据手册

 浏览型号FDS4070N7的Datasheet PDF文件第2页浏览型号FDS4070N7的Datasheet PDF文件第3页浏览型号FDS4070N7的Datasheet PDF文件第4页浏览型号FDS4070N7的Datasheet PDF文件第5页浏览型号FDS4070N7的Datasheet PDF文件第6页浏览型号FDS4070N7的Datasheet PDF文件第7页 
May 2003  
FDS4070N7  
40V N-Channel PowerTrench MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
“low side” synchronous rectifier operation, providing an  
extremely low RDS(ON) in a small package.  
15.3 A, 40 V. RDS(ON) = 7 m@ VGS = 10 V  
High performance trench technology for extremely  
low RDS(ON)  
High power and current handling capability  
Fast switching, low gate charge  
Applications  
Synchronous rectifier  
DC/DC converter  
FLMP SO-8 package: Enhanced thermal  
performance in industry-standard package size  
Bottom-side  
Drain Contact  
5
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
40  
± 20  
V
V
A
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
(Note 1a)  
15.3  
60  
3.0  
Maximum Power Dissipation  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
40  
0.5  
RθJA  
RθJC  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS4070N7  
FDS4070N7  
13’’  
12mm  
2500 units  
FDS4070N7 Rev B1 (W)  
2002 Fairchild Semiconductor Corporation  

FDS4070N7 替代型号

型号 品牌 替代类型 描述 数据表
FDS4072N7 FAIRCHILD

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