Datasheet > FDS4435_01

FDS4435_01

更新时间： 2024-09-26 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	65K
描述
30V P-Channel PowerTrench MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDS4435_01 数据手册

October 2001

FDS4435

30V P-Channel PowerTrench^ÒMOSFET

General Description

Features

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gave drive

voltage ratings (4.5V – 25V).

· –8.8 A, –30 V

R_DS(ON)= 20 mW @ V_GS= –10 V

R_DS(ON)= 35 mW @ V_GS= –4.5 V

· Low gate charge (17nC typical)

· Fast switching speed

Applications

· Power management

· Load switch

· High performance trench technology for extremely

low R_DS(ON)

· Battery protection

· High power and current handling capability

SO-8

Pin 1SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–30

V_GSS

I_D

Gate-Source Voltage

±25

Drain Current – Continuous

– Pulsed

(Note 1a)

–8.8

–50

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

(Note 1)

125

R_qJA

R_qJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS4435

13’’

12mm

2500 units

Ó2001 Fairchild Semiconductor Corporation

FDS4435 Rev F1(W)

12 3 4 5

中文翻译

下载PDF

与FDS4435_01相关器件

型号	品牌	获取价格	描述	数据表
FDS4435A	FAIRCHILD	获取价格	P-Channel Logic Level PowerTrench MOSFET
FDS4435A_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-o
FDS4435AD84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-o
FDS4435AF011	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-o
FDS4435AL86Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-o
FDS4435A-NBAI003A	FAIRCHILD	获取价格	Transistor
FDS4435BZ	FAIRCHILD	获取价格	30 Volt P-Channel PowerTrench MOSFET
FDS4435BZ	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，-30V，-8.8A，20mΩ
FDS4435BZ	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
FDS4435BZ_07	FAIRCHILD	获取价格	P-Channel PowerTrench㈢ MOSFET -30V, -8.8A, 20