Datasheet > FDS4435A-NBAI003A

FDS4435A-NBAI003A

更新时间： 2024-01-29 12:29:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	171K
描述
Transistor

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技术参数
数据手册

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FDS4435A-NBAI003A 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	9 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	2.5 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

FDS4435A-NBAI003A 数据手册

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October 2001

FDS4435A

P-Channel Logic Level PowerTrench MOSFET

General Description

Features

-9 A, -30 V. R_DS(ON)= 0.017 W @ V_GS= -10 V

R_DS(ON)= 0.025 W @ V_GS= -4.5 V

This P-Channel Logic Level MOSFET is produced using

Fairchild Semiconductors advanced PowerTrench process

that has been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for superior

switching performance.

Low gate charge (21nC typical).

High performance trench technology for extremely

These devices are well suited for notebook computer appli-

cations: load switching and power management, battery

charging circuits, and DC/DC conversion.

low R_DS(ON)

High power and current handling capability.

SO-8

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

-30

± 20

Drain Current - Continuous

- Pulsed

(Note 1a)

-9

-50

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

2.5

1.2

(Note 1c)

Operating and Storage Junction Temperature Range

-55 to +150

°C

T_J, T_stg

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θ_JA

°C/W

R_θ_JC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDS4435A

13’’

12mm

2500 units

ã2001 Fairchild Semiconductor Corporation

FDS4435A Rev. D

12 3 4 5

中文翻译

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