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FDS4480 PDF预览

FDS4480

更新时间: 2024-09-26 22:40:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
6页 89K
描述
40V N-Channel PowerTrench MOSFET

FDS4480 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.33
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:167213Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:SO 8L NB (SOIC)Samacsys Released Date:2015-04-13 16:43:26
Is Samacsys:N雪崩能效等级(Eas):240 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):10.8 A最大漏极电流 (ID):10.8 A
最大漏源导通电阻:0.012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.2 W最大脉冲漏极电流 (IDM):45 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS4480 数据手册

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February 2002  
FDS4480  
40V N-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
low gate charge, low RDS(ON) and fast switching speed.  
·
·
·
10.8 A, 40 V. RDS(ON) = 12 mW @ VGS = 10 V  
Low gate charge (29 nC)  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
·
High power and current handling capability  
·
DC/DC converter  
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8  
S
S
S
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
40  
+30/–20  
10.8  
V
V
A
VGSS  
Gate-Source Voltage  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
45  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
2.5  
PD  
W
1.4  
(Note 1c)  
1.2  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
RqJA  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1c)  
(Note 1)  
50  
125  
25  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS4480  
FDS4480  
13’’  
12mm  
2500 units  
FDS4480 Rev D (W)  
Ó2002 Fairchild Semiconductor Corporation  

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