生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.75 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 9.3 A |
最大漏源导通电阻: | 0.018 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS4501HF011 | FAIRCHILD |
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Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 2-Element, N-Channel and P-Channel, | |
FDS4501HL86Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 2-Element, N-Channel and P-Channel, | |
FDS4559 | FAIRCHILD |
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60V Complementary PowerTrench MOSFET | |
FDS4559 | ONSEMI |
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60V,互补,PowerTrench® MOSFET | |
FDS4559_08 | FAIRCHILD |
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60V Complementary PowerTrenchïMOSFET | |
FDS4559_NL | FAIRCHILD |
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Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channe | |
FDS4559D84Z | FAIRCHILD |
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Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channe | |
FDS4559F011 | FAIRCHILD |
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Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channe | |
FDS4559-F085 | ONSEMI |
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60V 互补 PowerTrench® MOSFET | |
FDS4559L99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channe |