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FDS4501HF011 PDF预览

FDS4501HF011

更新时间: 2024-01-07 22:40:06
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
11页 1559K
描述
Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

FDS4501HF011 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.75配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):9.3 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL AND P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS4501HF011 数据手册

 浏览型号FDS4501HF011的Datasheet PDF文件第2页浏览型号FDS4501HF011的Datasheet PDF文件第3页浏览型号FDS4501HF011的Datasheet PDF文件第4页浏览型号FDS4501HF011的Datasheet PDF文件第5页浏览型号FDS4501HF011的Datasheet PDF文件第6页浏览型号FDS4501HF011的Datasheet PDF文件第7页 
May 2001  
FDS4501H  
Complementary PowerTrenchÒ Half-Bridge MOSFET  
General Description  
Features  
This complementary MOSFET half-bridge device is  
produced using Fairchild’s advanced PowerTrench  
process that has been especially tailored to minimize  
the on-state resistance and yet maintain low gate  
charge for superior switching performance.  
·
Q1: N-Channel  
9.3A, 30V  
RDS(on) = 18 mW @ VGS = 10V  
RDS(on) = 23 mW @ VGS = 4.5V  
·
Q2: P-Channel  
Applications  
–5.6A, –20V  
RDS(on) = 46 mW @ VGS = –4.5V  
RDS(on) = 63 mW @ VGS = –2.5V  
· DC/DC converter  
· Power management  
· Load switch  
· Battery protection  
Q2  
D  
5
6
4
3
2
1
D
D
D
Q1  
7
8
SO-8
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Q1  
Q2  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
30  
±20  
9.3  
20  
–20  
±8  
V
V
A
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
–5.6  
–20  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
2.5  
W
1.2  
1
(Note 1c)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
RqJA  
°C/W  
°C/W  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS4501H  
FDS4501H  
13”  
12mm  
2500 units  
Ó2001 Fairchild Semiconductor Corporation  
FDS4501H Rev C(W)  

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