Datasheet > FDS4559_08

FDS4559_08

更新时间： 2024-01-09 13:05:30

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	385K
描述
60V Complementary PowerTrenchïMOSFET

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FDS4559_08 数据手册

October 2008

FDS4559_F085

60V Complementary PowerTrench MOSFET

General Description

Features

This complementary MOSFET device is produced using

Fairchild’s advanced PowerTrench process that has

been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for

superior switching performance.

•

Q1: N-Channel

4.5 A, 60 V

_DS(on)= 55 mΩ @ V_GS= 10V

R_DS(on)= 75 mΩ @ V_GS= 4.5V

•

Q2: P-Channel

Applications

–3.5 A, –60 V R_DS(on)= 105 mΩ @ V_GS= –10V

• DC/DC converter

R_DS(on)= 135 mΩ @ V_GS

= –4.5V

• Power management

• LCD backlight inverter

•

Qualified to AEC Q101

RoHS Compliant

•

SO-8

Pin 1

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

±20

4.5

–60

±20

–3.5

–20

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.6

1.2

(Note 1c)

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS4559

FDS4559_F085

13”

12mm

2500 units

2008 Fairchild Semiconductor Corporation

FDS4559_F085 Rev A (W)

12 3 4 5 6 7 8

中文翻译

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