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FDS4488 PDF预览

FDS4488

更新时间: 2024-11-12 22:40:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 71K
描述
30V N-Channel PowerTrench MOSFET

FDS4488 数据手册

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December 2001  
FDS4488  
30V N-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced PowerTrench process that  
has been especially tailored to minimize on-state  
resistance and yet maintain superior switching  
performance. These devices are well suited for low  
voltage and battery powered applications where low in-  
line power loss and fast switching are required.  
· 7.9 A, 30 V. RDS(ON) = 22 mW @ VGS = 10 V  
RDS(ON) = 30 mW @ VGS = 4.5 V  
· Low gate charge (9.5 nC typical)  
· High performance trench technology for extremely  
low RDS(ON)  
Applications  
· High power and current handling capability  
· DC/DC converter  
· Load switch  
· Motor drives  
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8  
S
S
S
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
ID  
Gate-Source Voltage  
±25  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
7.9  
40  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
2.5  
W
1.2  
1.0  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
RqJA  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
50  
25  
°C/W  
RqJC  
Thermal Resistance, Junction-to-Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS4488  
FDS4488  
13’’  
12mm  
2500 units  
Ó2001 Fairchild Semiconductor Corporation  
FDS4488 Rev B (W)  

FDS4488 替代型号

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