Datasheet > FDS4435F011

FDS4435F011

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	637K
描述
Power Field-Effect Transistor, 8.8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

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FDS4435F011 数据手册

June 1999

FDS4435

P-Channel Logic Level PowerTrench^TMMOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process

that has been especially tailored to minimize on-state

resistance and yet maintain superior switching

performance.

-8.8 A, -30 V. R_DS(ON)= 0.020 Ω @ V_GS= -10 V

R_DS(ON)= 0.035 Ω @ V_GS= -4.5 V

Low gate charge (17nC typical).

Fast switching speed.

This device is well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

High performance trench technology for extremely

low R_DS(ON)

Applications

High power and current handling capability.

DC/DC converter

Load switch

Motor drives

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1999 Fairchild Semiconductor Corporation

FDS4435Rev. D

12 3 4 5 6 7 8

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