Datasheet > FDS4448HCDW

FDS4448HCDW

更新时间： 2024-02-12 05:47:52

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
4页	287K
描述
Switching Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDS4448HCDW 数据手册

SEMICONDUCTOR

FDS4448HCDW

TECHNICAL DATA

FDS4448HAQW/HADW/HCDW/HSDW/HTW

Switching Diode

SOT-363

FEATURES

Fast Switching Speed

Ultra-Small Surface Mount Package

For General Purpose Switching Applications

High Conductance Power Dissipation

FDS4448HAQW

MARKING:KA5

FDS4448HADW

MARKING:KA6

FDS4448HCDW

MARKING:KA7

FDS4448HSDW

FDS4448HTW

MARKING:KAB

MARKING:KAA

KAB

- - - - - -

- -

+ +

KAA

KA7

KA6

KA5

KAA

KA7

KA6

KAB

KA5

- - - -

+ + + + + +

+ +

Soliddot = Pin1 indicate.

Soliddot = Green molding compound device, if none,the normal device.

Maximum Ratings and Electrical Characteristics, Single Diode @T^a=25℃

Parameter

Symbol

V_RM

Limit

Unit

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V_RRM

V_RWM

V_R

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Average Rectified Output Current

500

250

I_O

Non-Repetitive Peak Forward Surge Current @t=8.3ms

I_FSM

2.0

Power Dissipation

200

625

R_θJA

Thermal Resistance from Junction to Ambient

Storage Temperature

℃ /W

℃

T_STG

-55 ~+150

2016. 07. 13

Revision No : 0

1/4

12 3 4

中文翻译

下载PDF

与FDS4448HCDW相关器件

型号	品牌	获取价格	描述	数据表
FDS4448HSDW	FS	获取价格	Switching Diode
FDS4448HTW	FS	获取价格	Switching Diode
FDS4465	FAIRCHILD	获取价格	P-Channel 1.8V Specified PowerTrench MOSFET
FDS4465	ONSEMI	获取价格	P 沟道，1.8V 指定，PowerTrench® MOSFET，-20V，-13.5A，
FDS4465_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 13.5A I(D), 20V, 0.0085ohm, 1-Element, P-Channel, Silicon,
FDS4465-F085	ONSEMI	获取价格	P 沟道，1.8V 指定，PowerTrench® MOSFET，-20V，-13.5A，
FDS4470	FAIRCHILD	获取价格	40V N-Channel PowerTrench MOSFET
FDS4470	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，40V，12.5A，9mΩ
FDS4470_06	FAIRCHILD	获取价格	40V N-Channel PowerTrench㈢ MOSFET
FDS4470_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12.5A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, M