Datasheet > FDS4435BZ_07

FDS4435BZ_07

更新时间： 2024-01-27 13:57:14

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	301K
描述
P-Channel PowerTrench㈢ MOSFET -30V, -8.8A, 20mヘ

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FDS4435BZ_07 数据手册

June 2007

FDS4435BZ

P-Channel PowerTrench^®MOSFET

-30V, -8.8A, 20mΩ

Features

General Description

Max r_DS(on)= 20mΩ at V_GS= -10V, I_D= -8.8A

Max r_DS(on)= 35mΩ at V_GS= -4.5V, I_D= -6.7A

Extended V_GSSrange (-25V) for battery applications

HBM ESD protection level of ±3.8KV typical (note 3)

High performance trench technology for extremely low r_DS(on)

High power and current handling capability

Termination is Lead-free and RoHS compliant

This P-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench^®process that has

been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load

switching applications common in Notebook Computers and

Portable Battery Packs.

Pin 1

SO-8

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

-30

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

±25

T_A= 25°C

(Note 1a)

-8.8

I_D

-50

Power Dissipation

T_A= 25°C

(Note 1a)

(Note 1b)

(Note 4)

2.5

P_D

Power Dissipation

1.0

E_AS

Single Pulse Avalanche Energy

°C

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12mm

Quantity

FDS4435BZ

SO-8

13’’

2500units

FDS4435BZ Rev.C

www.fairchildsemi.com

12 3 4 5 6

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