Datasheet > FDS4080N7_04

FDS4080N7_04

更新时间： 2024-11-13 04:06:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	183K
描述
40V N-Channel FLMP PowerTrench MOSFET

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FDS4080N7_04 数据手册

February 2004

FDS4080N7



40V N-Channel FLMP PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low R_DS(ON)in a small package.

• 13 A, 40 V

R_DS(ON)= 10 mΩ @ V_GS= 10 V

• High performance trench technology for extremely

low R_DS(ON)

• High power and current handling capability

• Fast switching (Qg = 30 nC )

Applications

•

Synchronous rectifier

DC/DC converter

•

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

± 20

V_GSS

Gate-Source Voltage

I_D

Drain Current – Continuous

– Pulsed

Power Dissipation for Single Operation

(Note 1a)

3.9

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS4080N7

13’’

12mm

2500 units

FDS4080N7 Rev D1 (W)

2004 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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