Datasheet > FDMC86102_12

FDMC86102_12

更新时间： 2024-02-08 22:27:46

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	283K
描述
N-Channel Power TrenchÂ® MOSFET 100 V, 20 A, 24 mÎ©

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数据手册

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FDMC86102_12 数据手册

Typical Characteristics T_J= 25 °C unless otherwise noted

PULSE DURATION = 80 μs

V_GS= 4.5 V

DUTY CYCLE = 0.5% MAX

V_GS= 5 V

V_GS= 5.5 V

V_GS= 10 V

V_GS= 6 V

V_GS= 5.5 V

V_GS= 5 V

V_GS= 6 V

V_GS= 4.5 V

V_GS= 10 V

25 30

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V_DS, DRAIN TO SOURCE VOLTAGE (V)

I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

2.0

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

I_D= 7 A

1.8

1.6

1.4

1.2

1.0

0.8

0.6

V_GS= 10 V

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

25 50 75 100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On - Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80 μs

V_GS= 0 V

DUTY CYCLE = 0.5% MAX

V_DS= 5 V

T_J= 150 ^o

T_J= 25 ^oC

T_J= 150 ^o

0.1

T_J= 25 ^o

T_J= -55 ^o

0.01

0.001

T_J= -55 ^o

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDMC86102 Rev.C1

1 234 5 6 7

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