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FDMC035N10X1 PDF预览

FDMC035N10X1

更新时间: 2024-10-29 11:15:39
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 382K
描述
N 沟道,PowerTrench® MOSFET,100 V,5.5 A,37 mΩ

FDMC035N10X1 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-N5Reach Compliance Code:not_compliant
风险等级:5.75雪崩能效等级(Eas):181 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):5.5 A
最大漏极电流 (ID):5.5 A最大漏源导通电阻:0.037 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-240BA
JESD-30 代码:S-PDSO-N5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):130 A表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):115 ns最大开启时间(吨):34 ns
Base Number Matches:1

FDMC035N10X1 数据手册

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