FDD5N53

更新时间： 2024-09-15 06:59:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	246K
描述
N-Channel MOSFET 530V, 4A, 1.5Ω

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FDD5N53 数据手册

January 2009

UniFET^TM

FDD5N53/FDU5N53

N-Channel MOSFET

530V, 4A, 1.5Ω

Features

Description

•

R_DS(on)= 1.25Ω ( Typ.)@ V_GS= 10V, I_D= 2A

Low gate charge ( Typ. 11nC)

Low C_rss( Typ. 5pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pluse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power suppliesand active power

factor correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

I-PAK

FDU Series

D-PAK

FDD Series

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FDD5N53/FDU5N53

Units

Drain to Source Voltage

Gate to Source Voltage

530

±30

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- Pulsed

I_D

Drain Current

2.4

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

256

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.5

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

P_D

Power Dissipation

0.3

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Ratings

1.4

Units

R_θJC

R_θJA

^oC/W

110

FDD5N53/FDU5N53 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

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