Datasheet > EFA060B-70

EFA060B-70

更新时间： 2024-01-11 17:46:56

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	23K
描述
Low Distortion GaAs Power FET

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技术参数
数据手册

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EFA060B-70 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

EFA060B-70 数据手册

EFA060B-70

Excelics

DATA SHEET

Low Distortion GaAs Power FET

•

NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE

+24.0dBm TYPICAL OUTPUT POWER

7.5 dB TYPICAL POWER GAIN AT 12GHz

0.3 X 600 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

All Dimensions In mils.

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=6V, Ids=50% Idss

Gain at 1dB Compression

Vds=6V, Ids=50% Idss

Power Added Efficiency at 1dB Compression

Vds=6V, Ids=50% Idss

f=12GHz

22.0

24.0

7.5

P_1dB

dBm

f=18GHz

f=12GHz

f=18GHz

6.0

G_1dB

PAE

5.0

f=12GHz

Idss

Saturated Drain Current Vds=3V, Vgs=0V

100

170

240

-3.5

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

-2.0

-15

Vds=3V, Ids=1.5mA

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=1.0mA

Source Breakdown Voltage Igs=1.0mA

Thermal Resistance

-10

-6

-14

175^*

^oC/W

* Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

10V

CONTINUOUS²

Vds

Vgs

Ids

-6V

-4V

Idss

110mA

Igsf

Tch

Tstg

Forward Gate Current

Input Power

15mA

2.5mA

22dBm

175^oC

-65/175^oC

@ 3dB Compression

150 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

-65/150 ^oC

780mW

650mW

Note: 1 Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

中文翻译

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