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EFA480C-SOT89 PDF预览

EFA480C-SOT89

更新时间: 2024-09-25 22:27:51
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
2页 42K
描述
DC-4GHz Low Distortion GaAs Power FET

EFA480C-SOT89 数据手册

 浏览型号EFA480C-SOT89的Datasheet PDF文件第2页 
EFA480C-SOT89  
Excelics  
DATA SHEET  
DC-4GHz Low Distortion GaAs Power FET  
Features  
LOW COST SURFACE-MOUNT PLASTIC PACKAGE  
+34.0dBm TYPICAL OUTPUT POWER  
12.0dB TYPICAL POWER GAIN AT 2GHz  
0.8dB TYPICAL NOISE FIGURE AT 2GHz  
+48dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT  
POINT AT 2GHz  
0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE  
Si3N4 PASSIVATION  
ADVANCED EPITAXIAL DOPING PROFILE  
PROVIDES HIGH POWER EFFICIENCY,  
LINEARITY AND RELIABILITY  
(Top View)  
All Dimensions In Mils  
Applications  
Analog and Digital Wireless System  
HPA  
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)  
SYMBOLS  
P1dB  
PARAMETERS/TEST CONDITIONS  
MIN  
32.5  
TYP  
34.0  
MAX  
UNIT  
Output Power at 1dB Compression  
f = 2GHz  
dBm  
Vds=7V, Ids=750mA  
Gain at 1dB Compression  
Vds=7V, Ids=750mA  
f = 2GHz  
10.0  
12.0  
45  
dB  
%
G1dB  
PAE  
Power Added Efficiency at 1dB Compression  
Vds=7V, Ids=750mA  
f = 2GHz  
Noise Figure  
f = 2GHz  
Vds=5V, Ids=300mA  
Vds=5-7V, Ids=750mA  
Output 3rd Order Intercept Point  
Vds=5-7V, Ids=750mA  
Vds=5V, Ids=300mA  
0.8  
2.0  
dB  
NF  
f = 2GHz  
48  
39  
dBm  
IP3  
Saturated Drain Current Vds=3V, Vgs=0V  
880  
560  
1360  
720  
-2.0  
-15  
1760  
-3.5  
mA  
mS  
V
Idss  
Gm  
Transconductance  
Pinch-off Voltage  
Vds=3V, Vgs=0V  
Vds=3V, Ids=14mA  
Vp  
Drain Breakdown Voltage Igd=4.8mA  
Source Breakdown Voltage Igs=4.8mA  
Thermal Resistance  
-11  
-7  
V
BVgd  
BVgs  
Rth  
-14  
V
14*  
oC/W  
* Overall Rth depends on case mounting  
.
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
PARAMETERS  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
ABSOLUTE1  
12V  
CONTINUOUS2  
7V  
Vds  
-8V  
-4V  
Vgs  
Idss  
1.2A  
Ids  
Forward Gate Current  
Input Power  
120mA  
32dBm  
175oC  
-65/175oC  
10 W  
20mA  
Igsf  
@ 3dB Compression  
150oC  
-65/150oC  
Pin  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
Tch  
Tstg  
Pt  
8.4 W  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054  
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com  

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