Datasheet > EFA720A

EFA720A

更新时间： 2024-02-18 22:13:37

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	28K
描述
Low Distortion GaAs Power FET

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EFA720A 数据手册

EFA720A

Excelics

DATA SHEET

Low Distortion GaAs Power FET

•

+35.5dBm TYPICAL OUTPUT POWER

17.5dB TYPICAL POWER GAIN AT 2GHz

0.5 X 7200 MICRON RECESSED

“MUSHROOM” GATE

•

Si₃N₄PASSIVATION AND PLATED HEAT SINK

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

•

Idss SORTED IN 120mA PER BIN RANGE

Chip Thickness: 50 10 microns

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

(with > 20 microns Gold Plated Heat Sink (PHS) )

All Dimensions In Microns

SYMBOLS

P_1dB

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f= 2GHz

33.5

35.5

17.5

12.5

dBm

f= 4GHz

f= 2GHz

f= 4GHz

16.0

G_1dB

PAE

Power Added Efficiency at 1dB Compression

Vds=8V, Ids=50% Idss

f= 2GHz

Saturated Drain Current Vds=3V, Vgs=0V

1200 2040

2640

-3.5

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

840

1100

-2.0

-15

-14

Vds=3V, Ids=20mA

Drain Breakdown Voltage Igd=7.2mA

Source Breakdown Voltage Igs=7.2mA

Thermal Resistance (Au-Sn Eutectic Attach)

-12

-7

BVgd

BVgs

Rth

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE ¹

12V

CONTINUOUS²

Vds

Vgs

Ids

-8V

-4V

Idss

2.4A

Forward Gate Current

Input Power

180mA

34dBm

175^oC

30mA

Igsf

Tch

Tstg

@3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

-65/175^oC

23 W

19 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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