Datasheet > EFB025A

EFB025A

更新时间： 2024-09-27 06:56:11

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	36K
描述
General Purpose GaAs FET

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EFB025A 数据手册

Excelics

EFB025A

PRELIMINARY DATA SHEET

General Purpose GaAs FET

420

104

+18.5dBm TYPICAL OUTPUT POWER

11.0dB TYPICAL POWER GAIN AT 12GHz

TYPICAL 1.3 dB NOISE FIGURE AND 11 dB ASSOCIATED

GAIN AT 12GHz

260

0.3 X 250 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

Chip Thickness: 75 ± 13 microns

All Dimensions In Microns

Idss SORTED IN 5mA PER BIN RANGE

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

18.5

MAX

UNIT

Output Power at 1dB Compression

f=12GHz

f=18GHz

f=12GHz

f=18GHz

dBm

P_1dB

Vds=6V, Ids=50% Idss

Gain at 1dB Compression

Vds=6V, Ids=50% Idss

G_1dB

Noise Figure Vds=3V,Ids=15mA

Associated Gain Vds=3V,Ids=15mA

f=12GHz

1.3

Saturated Drain Current Vds=3V, Vgs=0V

105

-3.0

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=1.0mA

-1.5

-8.5

155

Drain Breakdown Voltage Igd=100uA

Source Breakdown Voltage Igs=100uA

Thermal Resistance (Au-Sn Eutectic Attach)

-5.5

BVgd

BVgs

Rth

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Drain-Source Voltage

Gate-Source Voltage

Drain Current

10V

-6V

Idss

Vds

Vgs

Ids

-4V

Idss

Forward Gate Current

Input Power

6mA

1mA

Igsf

Tch

Tstg

16dBm

175^oC

-65/175^oC

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

880mW

730mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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