Datasheet > EFA960CR-180F

EFA960CR-180F

更新时间： 2024-01-25 00:22:43

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	135K
描述
Low Distortion GaAs Power FET

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数据手册

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EFA960CR-180F 数据手册

EFA960CR-180F

ISSUED 05/11/2006

Low Distortion GaAs Power FET

FEATURES

•

Non-Hermetic 180mil Metal Flange Package

+36.5 dBm Typical Output Power

16.0 dB Typical Power Gain at 2GHz

0.5 x 9600 Micron Recessed “Mushroom” Gate

Si₃N₄Passivation

Advanced Epitaxial Heterojunction Profile

Provides High Power Efficiency, Linearity

and Reliability

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

35.0

TYP

36.5

16.0

11.0

MAX

UNITS

Output Power at 1dB Compression

V_DS= 8 V, I_DS≈ 50% I_DSS

f = 2GHz

f = 4GHz

dBm

14.5

Gain at 1dB Compression

V_DS= 8 V, I_DS≈ 50% I_DSS

f = 2GHz

f = 4GHz

G_1dB

PAE

Power Added Efficiency at 1dB Compression

V_DS= 8 V, I_DS≈ 50% I_DSS

f = 2GHz

V_DS= 3 V, V_GS= 0 V

_DS= 3 V, V_GS= 0 V

V_DS= 3 V, I_DS= 28 mA

I_DSS

G_M

Saturated Drain Current

1600

1100

2720

1450

-2.0

-15

3520

-3.5

Transconductance

V_P

Pinch-off Voltage

BV_GD

BV_GS

R_TH

Drain Breakdown Voltage

Source Breakdown Voltage

Thermal Resistance

_GD= 9.6 mA

_GS= 9.6 mA

-13

-7

-14

^oC/W

* Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

Vds

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reversed Gate Current

Input Power

ABSOLUTE¹

CONTINUOUS²

12V

-5V

Vgs

-3V

Igsf

43.2 mA

-7.2 mA

33 dBm

175^oC

14.4 mA

-2.4 mA

Igsr

@ 3dB Compression

175^oC

Tch

Channel Temperature

Storage Temperature

Total Power Dissipation

Tstg

-65/175^oC

23 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised May 2006

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