Datasheet > EFA1200A

EFA1200A

更新时间： 2024-09-26 06:56:11

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	31K
描述
Low Distortion GaAs Power FET

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EFA1200A 数据手册

EFA1200A

Excelics

PRELIMINARY DATA SHEET

Low Distortion GaAs Power FET

•

+37.0dBm TYPICAL OUTPUT POWER

16.0dB TYPICAL POWER GAIN AT 2GHz

0.5 X 12,000 MICRON RECESSED

“MUSHROOM” GATE

•

Si₃N₄PASSIVATION AND PLATED HEAT SINK

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

•

Idss SORTED IN 200mA PER BIN RANGE

Chip Thickness: 50 10 microns

(with > 20 microns Gold Plated Heat Sink (PHS) )

All Dimensions In Microns

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f= 2GHz

35.5

37.0

16.0

11.0

dBm

P_1dB

f= 4GHz

f= 2GHz

f= 4GHz

14.5

G_1dB

Saturated Drain Current Vds=3V, Vgs=0V

2000 3400

1400 1800

-2.0

4400

-3.5

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=30mA

Drain Breakdown Voltage Igd=12mA

Source Breakdown Voltage Igs=12mA

Thermal Resistance (Au-Sn Eutectic Attach)

-12

-7

-15

-14

BVgd

BVgs

Rth

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

12V

CONTINUOUS²

Vds

Vgs

Ids

-8V

-4V

Idss

2.0A

Forward Gate Current

Input Power

300mA

36dBm

175^oC

50mA

Igsf

Tch

Tstg

@3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

-65/175^oC

34 W

28 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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