Datasheet > EFA080A-100F

EFA080A-100F

更新时间： 2024-01-27 15:18:06

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页数	文件大小	规格书
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描述
Low Distortion GaAs Power FET

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EFA080A-100F 数据手册

EFA080A-100F

Excelics

DATA SHEET

Low Distortion GaAs Power FET

•

HERMETIC 100mil CERAMIC FLANGE PACKAGE

+26.0dBm TYPICAL OUTPUT POWER

7.5dB TYPICAL POWER GAIN AT 12GHz

0.3 X 800 MICRON RECESSED “MUSHROOM”

GATE

•

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

All Dimensions In mils

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

Power Added Efficiency at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

dBm

P_1dB

24.0

6.0

26.0

7.5

f=12GHz

G_1dB

PAE

f=12GHz

Saturated Drain Current Vds=3V, Vgs=0V

130

210

120

-2.0

-15

-14

58*

300

-3.5

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=2.0mA

Drain Breakdown Voltage Igd=1.0mA

Source Breakdown Voltage Igs=1.0mA

Thermal Resistance

-12

-7

BVgd

BVgs

Rth

^oC/W

* Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

12V

CONTINUOUS²

Vds

Vgs

Ids

-8V

-4V

Idss

250mA

Forward Gate Current

Input Power

20mA

4mA

Igsf

Tch

Tstg

25dBm

175^oC

-65/175^oC

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

2.5 W

2.0W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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