Datasheet > EFA120A

EFA120A

更新时间： 2024-11-24 06:56:11

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	37K
描述
Low Distortion GaAs Power FET

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EFA120A 数据手册

EFA120A

Excelics

DATA SHEET

Low Distortion GaAs Power FET

670

•

+28.0dBm TYPICAL OUTPUT POWER

9.5dB TYPICAL POWER GAIN AT 12GHz

0.3 X 1200 MICRON RECESSED

“MUSHROOM” GATE

116

•

Si₃N₄PASSIVATION

340

100

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

Idss SORTED IN 20mA PER BIN RANGE

•

Chip Thickness: 75 ± 13 microns

All Dimensions In Microns

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

P_1dB

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

f=18GHz

26.0

28.0

9.5

dBm

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

f=18GHz

8.0

G_1dB

PAE

7.0

Power Added Efficiency at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

Idss

Saturated Drain Current Vds=3V, Vgs=0V

200

140

340

440

-3.5

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

180

-2.0

-15

-14

Vds=3V, Ids=3.0mA

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=1.2mA

Source Breakdown Voltage Igs=1.2mA

Thermal Resistance (Au-Sn Eutectic Attach)

-12

-7

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

12V

CONTINUOUS²

Vds

Vgs

Ids

-8V

-4V

Idss

385mA

Igsf

Tch

Tstg

Forward Gate Current

Input Power

30mA

5mA

26dBm

175^oC

-65/175^oC

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

3.7 W

3.1 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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