Datasheet > EFA120B

EFA120B

更新时间： 2024-01-15 01:22:54

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	36K
描述
Low Distortion GaAs Power FET

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数据手册

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EFA120B 数据手册

EFA120B/EFA120BV

Excelics

DATA SHEET

Low Distortion GaAs Power FET

550

156

+28.0dBm TYPICAL OUTPUT POWER

9.5dB TYPICAL POWER GAIN FOR EFA120B AND

11.5dB FOR EFA120BV AT 12GHz

•

0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

•

350

100

EFA120BV WITH VIA HOLE SOURCE GROUNDING

Idss SORTED IN 20mA PER BIN RANGE

•

120

Chip Thickness: 75 ± 20 microns

All Dimensions In Microns

Via Hole

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

No Via Hole For EFA120B

SYMBOLS

PARAMETERS/TEST CONDITIONS

EFA120B

TYP

UNIT

EFA120BV

MIN

MAX

MIN

TYP

MAX

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

f=18GHz

26.0

28.0

26.0

28.0

P_1dB

G_1dB

PAE

Idss

dBm

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

f=18GHz

8.0

9.5

7.0

10.0

11.5

9.0

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

Saturated Drain Current Vds=3V, Vgs=0V

200

140

340

440

-3.5

200

140

340

440

-3.5

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

180

-2.0

-15

-14

180

-2.0

-15

-14

Vds=3V, Ids=3.0mA

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=1.2mA

Source Breakdown Voltage Igs=1.2mA

Thermal Resistance (Au-Sn Eutectic Attach)

-12

-7

-12

-7

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

EFA120B

EFA120BV

ABSOLUTE¹

CONTINUOUS²

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

-8V

-4V

-8V

-4V

Idss

5mA

Idss

355mA

5mA

Idss

Igsf

Forward Gate Current

Input Power

30mA

26dBm

30mA

26dBm

@ 3dB

Compression

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation

175^oC

150^oC

175^oC

150^oC

-65/175^oC

-65/150^oC

-65/175^oC

-65/150^oC

3.4W

2.8W

4.5W

3.8W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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