Datasheet > EFA480C

EFA480C

更新时间： 2024-09-26 06:56:11

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	28K
描述
Low Distortion GaAs Power FET

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技术参数
数据手册

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EFA480C 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

EFA480C 数据手册

EFA480C

Excelics

DATA SHEET

Low Distortion GaAs Power FET

680

104

160

•

+34.0dBm TYPICAL OUTPUT POWER

18.0dB TYPICAL POWER GAIN AT 2GHz

0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION AND PLATED HEAT SINK

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

620

•

Idss SORTED IN 80mA PER BIN RANGE

155

100

120

Chip Thickness: 75 ± 13 microns

All Dimensions In Microns

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

P_1dB

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f= 2GHz

32.0

34.0

18.0

12.5

dBm

f= 4GHz

f= 2GHz

f= 4GHz

16.0

G_1dB

PAE

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f= 2GHz

Idss

Saturated Drain Current Vds=3V, Vgs=0V

800

560

1360

1760

-3.5

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

720

-2.0

-15

-14

Vds=3V, Ids=10mA

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=4.8mA

Source Breakdown Voltage Igs=4.8mA

Thermal Resistance (Au-Sn Eutectic Attach)

-12

-7

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE ¹

12V

CONTINUOUS²

Vds

Vgs

Ids

-8V

-4V

Idss

1.2A

Igsf

Tch

Tstg

Forward Gate Current

Input Power

120mA

32dBm

175^oC

20mA

@3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

-65/175^oC

11.4 W

9.5 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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