EFA240D-SOT89
Excelics
DATA SHEET
DC-4GHz Low Distortion GaAs Power FET
Features
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LOW COST SURFACE-MOUNT PLASTIC PACKAGE
+31.0dBm TYPICAL OUTPUT POWER
13.0dB TYPICAL POWER GAIN AT 2GHz
0.7dB TYPICAL NOISE FIGURE AT 2GHz
+48dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT
AT 2GHz
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0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
(Top View)
All Dimensions In Mils
Applications
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Analog and Digital Wireless System
HPA
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
dBm
dB
Output Power at 1dB Compression
f = 2GHz
f = 2GHz
29.5
31.0
P1dB
Vds=7V, Ids=350mA
Gain at 1dB Compression
Vds=7V, Ids=350mA
11.0
13.0
45
G1dB
Power Added Efficiency at 1dB Compression
%
PAE
NF
Vds=7V, Ids=350mA
Noise Figure
f = 2GHz
f = 2GHz
Vds=5V, Ids=150mA
Vds=5-7V, Ids=350mA
Output 3rd Order Intercept Point
Vds=5-7V, Ids=350mA
Vds=5V, Ids=150mA
0.7
1.2
dB
f = 2GHz
48
36
dBm
IP3
Saturated Drain Current Vds=3V, Vgs=0V
440
280
680
360
-2.0
-15
880
-3.5
mA
mS
V
Idss
Gm
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=6mA
Vp
Drain Breakdown Voltage Igd=2.4mA
Source Breakdown Voltage Igs=2.4mA
Thermal Resistance
-11
-7
V
BVgd
BVgs
Rth
-14
V
25*
oC/W
*Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
ABSOLUTE1
12V
CONTINUOUS2
7V
Vds
-8V
-4V
Vgs
Idss
660mA
Ids
Forward Gate Current
Input Power
60mA
29dBm
175oC
-65/175oC
5.5 W
10mA
Igsf
@ 3dB Compression
150oC
-65/150oC
Pin
Channel Temperature
Storage Temperature
Total Power Dissipation
Tch
Tstg
Pt
4.6 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com