Datasheet > EFA160A

EFA160A

更新时间： 2024-11-24 10:05:43

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	36K
描述
Low Distortion GaAs Power FET

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EFA160A 数据手册

EFA160A

Excelics

DATA SHEET

Low Distortion GaAs Power FET

•

+29.0dBm TYPICAL OUTPUT POWER

9.0dB TYPICAL POWER GAIN AT 12GHz

0.3 X 1600 MICRON RECESSED

“MUSHROOM” GATE

840

116

•

Si₃N₄PASSIVATION

340

100

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

Idss SORTED IN 30mA PER BIN RANGE

•

Chip Thickness: 75 ± 13 microns

All Dimensions In Microns

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

P_1dB

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

27.0

29.0

9.0

dBm

f=18GHz

f=12GHz

f=18GHz

7.0

G_1dB

PAE

6.5

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

Idss

Saturated Drain Current Vds=3V, Vgs=0V

260

180

420

600

-3.5

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

240

-2.0

-15

-14

Vds=3V, Ids=4.0mA

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=1.6mA

Source Breakdown Voltage Igs=1.6mA

Thermal Resistance (Au-Sn Eutectic Attach)

-12

-7

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

-8V

-4V

Idss

475mA

Igsf

Tch

Tstg

Forward Gate Current

Input Power

40mA

28dBm

175^oC

-65/175^oC

4.5W

7mA

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

3.8W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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