Datasheet > EFA240BV-100P

EFA240BV-100P

更新时间： 2024-09-26 06:56:11

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	43K
描述
Low Distortion GaAs Power FET

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EFA240BV-100P 数据手册

EFA240BV-100P

ISSUED 09/28/2007

Low Distortion GaAs Power FET

•

NON-HERMETIC 100MIL METAL FLANGE PACKAGE

+31.0dBm TYPICAL OUTPUT POWER

8.5dB TYPICAL POWER GAIN AT 12GHz

0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Compression

V_DS=8V, I_DS=50% I_DSS

f= 12GHz

f= 18GHz

29.0

31.0

8.5

dBm

P_1dB

Gain at 1dB Compression

V_DS=8V, I_DS=50% I_DSS

Power Added Efficiency at 1dB Compression

f= 12GHz

f= 18GHz

G_1dB

PAE

6.0

V_DS=8V, I_DS=50% I_DSS

Saturated Drain Current

Transconductance

f=12GHz

400

280

680

360

-2.0

-15

-14

880

-3.5

I_DSS

V_DS=3V, V_GS=0V

V_DS=3V,I_DS=6mA

I_GD=2.4mA

Pinch-off Voltage

-13

-7

BV_GD

BV_GS

Rth

Drain Breakdown Voltage

Source Breakdown Voltage

I_GS=2.4mA

ºC/W

Thermal Resistance (Au-Sn Eutectic Attach)

Note: * Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

V_DS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reverse Gate Current

Input Power

ABSOLUTE¹

12V

CONTINUOUS²

V_GS

-8V

-4V

Igf

60 mA

10 mA

Igr

-1.8 mA

29 dBm

175^oC

-0.6 mA

@ 3dB Compression

175^oC

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation

-65/175^oC

9.1 W

7.6 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised September 2007

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