Datasheet > EFA480C-CP083

EFA480C-CP083

更新时间： 2024-09-26 06:56:11

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	40K
描述
Low Distortion GaAs Power FET

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技术参数
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EFA480C-CP083 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

EFA480C-CP083 数据手册

EFA480C-CP083

UPDATED 12/28/2004

Low Distortion GaAs Power FET

FEATURES

•

NON-HERMETIC SURFACE MOUNT

160MIL METAL CERAMIC PACKAGE

+33.5 dBm OUTPUT POWER AT 1dB COMPRESSION

16.0 dB GAIN AT 2 GHz

0.5x4800 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

•

ADVANCED EPITAXIAL HETEROJUNCTION PROFILE

PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH

RELIABILITY

All Dimensions in mil

Tolerance: ± 3 mil

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

PARAMETER/TEST CONDITIONS

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

f = 2.0 GHz

f = 4.0 GHz

f = 2.0 GHz

f = 4.0 GHz

32.0

33.5

16.0

11.0

P_1dB

dBm

Vds = 8 V, Ids=50% Idss

Gain at 1dB Compression

Vds = 8 V, Ids=50% Idss

14.5

G_1dB

Power Added Efficiency at 1dB Compression

PAE

I_DSS

1360

720

-2.0

-15

Vds = 8 V, Ids=50% Idss

f = 2.0 GHz

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

800

560

1760

-3.5

G_M

Transconductance

_DS= 3 V, V_GS= 0 V

V_P

Pinch-off Voltage

_DS= 3 V, I_DS= 10 mA

BV_GD

BV_GS

R_TH*

Drain Breakdown Voltage

Source Breakdown Voltage

Thermal Resistance

_GD= 4.8 mA

_GS= 4.8 mA

-12

-7

-14

14*

^oC/W

Notes: * Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

12V

-8V

-4.0V

Gate-Source Voltage

Drain Current

Idss

1.0A

Igsf

Tch

Tstg

Forward Gate Current

Input Power

120mA

32dBm

175^oC

-65/175^oC

9.7W

20mA

@ 3dB Compression

150 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

-65/150 ^oC

8.1W

Note: 1 Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised January 2005

中文翻译

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