Datasheet > EFA240D

EFA240D

更新时间： 2024-02-18 17:00:40

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	24K
描述
Low Distortion GaAs Power FET

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EFA240D 数据手册

EFA240D

Excelics

DATA SHEET

Rev.1

Low Distortion GaAs Power FET

410

104

•

+31.0dBm TYPICAL OUTPUT POWER

18.5dB TYPICAL POWER GAIN AT 2GHz

0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION AND PLATED HEAT SINK

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

620

•

Idss SORTED IN 40mA PER BIN RANGE

155

100

Chip Thickness: 75 ± 13 microns

All Dimensions In Microns

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

Power Added Efficiency at 1dB Compression

f= 2GHz

29.0

31.0

18.5

13.5

P_1dB

dBm

f= 4GHz

f= 2GHz

f= 4GHz

16.0

G_1dB

PAE

Vds=8V, Ids=50% Idss

f=2GHz

Idss

Saturated Drain Current Vds=3V, Vgs=0V

400

280

680

880

-3.5

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=6mA

360

-2.0

-15

-14

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=2.4mA

Source Breakdown Voltage Igs=2.4mA

Thermal Resistance (Au-Sn Eutectic Attach)

-12

-7

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

12V

CONTINUOUS²

Vds

Vgs

Ids

-8V

-4V

Idss

620mA

Igsf

Tch

Tstg

Forward Gate Current

Input Power

60mA

10mA

29dBm

175^oC

-65/175^oC

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

6.0 W

5.0 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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