Datasheet > EFA480B

EFA480B

更新时间： 2024-01-07 00:10:48

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	48K
描述
Low Distortion GaAs Power FET

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技术参数
数据手册

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EFA480B 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

EFA480B 数据手册

Excelics EFA480B/EFA480BV

PRELIMINARY DATA SHEET

Low Distortion GaAs Power FET

960

+34.0dBm TYPICAL OUTPUT POWER

6.0dB TYPICAL POWER GAIN FOR EFA480B AND

7.5dB FOR EFA480BV AT 12GHz

156

0.5X 4800 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

420

110

120

EPA480BV WITH VIA HOLE SOURCE GROUNDING

Idss SORTED IN 80mA PER BIN RANGE

Chip Thickness: 60 ± 10 microns

All Dimensions In Microns

: Via Hole No Via Hole For EFA480B

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

EFA480B

TYP

UNIT

EFA480BV

TYP

MIN

32.0

4.5

MAX

MIN

32.0

5.0

MAX

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

f=8GHz

f=12GHz

34.0

P_1dB

G_1dB

PAE

Idss

dBm

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=8GHz

f=12GHz

10.0

6.0

12.0

7.0

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

Saturated Drain Current Vds=3V, Vgs=0V

800

560

1360

1760

-3.5

800

560

1360

1760

-3.5

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

720

-2.0

-15

-14

720

-2.0

-15

-14

Vds=3V, Ids=10mA

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=4.8mA

Source Breakdown Voltage Igs=4.8mA

Thermal Resistance (Au-Sn Eutectic Attach)

-12

-7

-12

-7

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

EFA480B

EFA480BV

ABSOLUTE¹

CONTINUOUS²

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

-8V

-3V

-8V

-3V

Idss

1.4A

20mA

Idss

1.75A

20mA

Igsf

Forward Gate Current

Input Power

120mA

32dBm

120mA

32dBm

@ 3dB

Compression

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation

175^oC

150^oC

175^oC

150^oC

-65/175^oC

-65/150^oC

-65/175^oC

-65/150^oC

14W

11W

17W

14W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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