Datasheet > EFA240BV

EFA240BV

更新时间： 2024-02-18 23:05:30

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	40K
描述
Low Distortion GaAs Power FET

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EFA240BV 数据手册

EFA240B/EFA240BV

Excelics

DATA SHEET

Low Distortion GaAs Power FET

960

+31.0dBm TYPICAL OUTPUT POWER

8.5dB TYPICAL POWER GAIN FOR EFA240B AND

10.5dB FOR EFA240BV AT 12GHz

0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

•

156

•

350

100

120

EFA240BV WITH VIA HOLE SOURCE GROUNDING

Idss SORTED IN 40mA PER BIN RANGE

•

Chip Thickness: 75 ± 20 microns

All Dimensions In Microns

Via Hole

No Via Hole For EFA240B

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

EFA240B

TYP

UNIT

EFA240BV

MIN

MAX

MIN

TYP

MAX

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

f=18GHz

29.0

31.0

29.0

31.0

P_1dB

G_1dB

PAE

Idss

dBm

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

f=18GHz

7.0

8.5

6.0

9.0

10.5

8.0

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

Saturated Drain Current Vds=3V, Vgs=0V

400

280

680

880

-3.5

400

280

680

880

-3.5

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=6 mA

360

-2.0

-15

-14

360

-2.0

-15

-14

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=2.4mA

Source Breakdown Voltage Igs=2.4mA

Thermal Resistance (Au-Sn Eutectic Attach)

-12

-7

-12

-7

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

EFA240B

EFA240BV

ABSOLUTE¹

CONTINUOUS²

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

-8V

-4V

-8V

-4V

Idss

710mA

10mA

Idss

10mA

Igsf

Forward Gate Current

Input Power

60mA

29dBm

60mA

29dBm

@ 3dB

Compression

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation

175^oC

150^oC

175^oC

150^oC

-65/175^oC

-65/150^oC

-65/175^oC

-65/150^oC

6.8W

5.7W

9.1W

7.6W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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